NUS5530MN ON Semiconductor, NUS5530MN Datasheet - Page 2

• Manufacturer Part Number: NUS5530MN
• Description: Integrated Power Mosfet With Pnp Low Vce Sat Switching Transistor
• Manufacturer: ON Semiconductor

1. FR−4 @ 100 mm
2. FR−4 @ 500 mm
3. Thermal response.
MAXIMUM RATINGS FOR PNP TRANSISTORS
THERMAL CHARACTERISTICS FOR P−CHANNEL FET
THERMAL CHARACTERISTICS FOR PNP TRANSISTORS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
Maximum Junction−to−Ambient (Note 4)
Maximum Junction−to−Foot (Drain)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Lead #1
Total Device Dissipation (Single Pulse < 10 sec)
Junction and Storage Temperature Range
t v 5 sec
Steady State
Steady State
T
T
A
A
= 25°C
= 25°C
2
2
, 1 oz copper traces.
, 1 oz copper traces.
Characteristic
Characteristic
Rating
(T
A
http://onsemi.com
= 25°C)
2
R
R
(Notes 2 & 3)
P
P
qJA
qJA
D
D
Symbol
Symbol
Symbol
P
T
V
V
V
ESD
R
R
(Note 1)
(Note 2)
R
Dsingle
J
I
(Note 1)
(Note 2)
, T
CEO
CBO
EBO
CM
I
qJA
qJF
qJL
C
stg
Typ
40
80
15
HBM Class 3
MM Class C
−55 to +150
Max
−5.0
−2.0
−7.0
Max
1.35
2.75
−35
−55
635
200
5.1
11
90
15
Max
50
95
20
mW/°C
mW/°C
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
Unit
Unit
Vdc
Vdc
Vdc
Adc
mW
°C
W
W
A