NUS5530MN ON Semiconductor, NUS5530MN Datasheet - Page 3

• Manufacturer Part Number: NUS5530MN
• Description: Integrated Power Mosfet With Pnp Low Vce Sat Switching Transistor
• Manufacturer: ON Semiconductor

4. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Guaranteed by design, not subject to production testing.
ELECTRICAL CHARACTERISTICS FOR P−CHANNEL FET
Static
Dynamic (Note 6)
Gate Threshold Voltage
Gate−Body Leakage
Zero Gate Voltage Drain Current
On−State Drain Current (Note 5)
Drain−Source On−State Resistance (Note 5)
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Source−Drain Reverse Recovery Time
Characteristic
Symbol
V
r
I
DS(on)
t
t
I
I
Q
Q
C
V
C
GS(th)
D(on)
C
d(on)
d(off)
GSS
DSS
Q
g
t
SD
oss
t
t
GS
GD
rss
iss
rr
fs
G
r
f
http://onsemi.com
V
V
I
V
I
DS
D
F
DS
V
V
V
V
V
V
DS
V
V
^ −1.0 A, V
= −1.1 A, di/dt = 100 A/ms
GS
GS
I
DS
DS
DS
DS
S
= −5.0 Vdc, V
DS
DD
v −5.0 V, V
= −10 V, V
= −2.1 A, V
3
= −3.6 V, I
= −2.5 V, I
Test Condition
= V
= 0 V, V
= −16 V, V
= −10 V, I
= −16 V, V
= −10 V, R
(T
f = 1.0 MHz
I
T
D
R
J
GS
J
G
= 25°C unless otherwise noted)
= −3.9 A
= 85°C
, I
= 6 W
D
GS
GEN
GS
D
= −250 mA
D
D
GS
GS
GS
GS
GS
L
= "12 V
= −3.9 A
= −1.0 A
= −1.0 A
= −4.5 V,
= 10 W
= −4.5 V,
= −4.5 V
= 0 V
= 0 V,
= 0 Vdc,
= 0 V
−0.6
Min
−20
−
0.050
0.070
−0.8
Typ
710
400
140
9.7
1.2
3.6
12
14
22
42
35
30
"100
0.083
Max
−1.2
−1.0
−5.0
0.06
−1.2
100
22
30
55
70
60
Mhos
Unit
nC
nA
mA
pF
ns
W
V
A
V