BFY183 Infineon Technologies Corporation, BFY183 Datasheet

BFY183

Manufacturer Part Number

BFY183

Description

Hirel Npn Silicon Rf Transistor

Manufacturer

Infineon Technologies Corporation

Datasheet

1.BFY183.pdf (5 pages)

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Download datasheet (33Kb)

HiRel NPN Silicon RF Transistor

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFY 183 (ql)

(ql) Testing level: P: Professional testing

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Operating temperature range

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

The maximum permissible base current for V

HiRel Discrete and Microwave Semiconductor

For low noise, high-gain broadband amplifiers at co

Hermetically sealed microwave package

esa

currents from 2mA to 30mA

F = 2.3 dB at 2 GHz

ESA/SCC Detail Spec. No.: 5611/006

is measured on the collector lead at the soldering point to the pcb

= 8 GHz

99°C

Space Qualified

H: High Rel quality

S: Space quality

ES: ESA qualified

Marking

1=C

2=E

FBE

measurements is 20mA (spotmeasurement duration < 1s)

Pin Configuration

3=B

Symbol

stg

CEO

CES

CBO

EBO

tot

thJS

4=E

-65 ... 200

Value

450

200

225

Package

MICRO-X1

2007-08-16

BFY 183

Unit

°C

Unit

K/W

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BFY183 Summary of contents

Page 1

HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA Hermetically sealed microwave package GHz 2 GHz esa ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Base-emitter forward voltage mA Collector-emitter cutoff current 0,3µ Collector -base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz mA 500 MHz C ...

Page 4

Micro-X1 Package 1.02 ±0 1.78 1.05 ±0.25 0.76 +0.05 0.1 -0.03 GXM05552 4 BFY 183 2007-08-16 ...

Page 5

Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...

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