BFY183 Infineon Technologies Corporation, BFY183 Datasheet - Page 3

• Manufacturer Part Number: BFY183
• Description: Hirel Npn Silicon Rf Transistor
• Manufacturer: Infineon Technologies Corporation

1
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
I
Collector-base capacitance
V
Collector emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 2 GHz
Power gain, maximum available
I
Z
Transducer gain
I
f = 2 GHz
Output power
I
Z
C
C
C
C
C
C
G ma = |S 21e / S 12e | (k-(k²-1) 1/2 ), G ms = |S 21e / S 12e |
L
S
CB
CE
EB
= 20 mA, V
= 25 mA, V
= 8 mA, V
= 20 mA, V
= 20 mA, V
= 30 mA, V
= Z
= Z
= 0.5 V, V
= 10 V, V
= 10 V, V
Lopt
L
= 50
, f = 2 GHz
CE
CE
CE
CE
CE
CE
BE
BE
CB
, f = 2 GHz
= 5 V, Z
= 5 V, f = 500 MHz
= 8 V, f = 500 MHz
= 5 V, Z
= 5 V, Z
= 5 V, P
= v
= v
= v
be
be
cb
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
S
S
S
IN
= Z
= Z
= Z
= 7 dBm,
Sopt
Sopt
L
A
= 50
= 25°C, unless otherwise specified
,
,
,
3
Symbol
f
C
C
C
F
G
|S
P
T
OUT
cb
ce
eb
ma
21e
1)
|
2
min.
13.5
12.5
6.5
9
-
-
-
-
-
Values
10.5
14.5
0.32
0.34
typ.
7.5
1.1
2.3
14
8
max.
0.44
1.4
2.9
2007-08-16
-
-
-
-
-
-
BFY 183
Unit
GHz
pF
dB
dB
dBm