BFY183 Infineon Technologies Corporation, BFY183 Datasheet
BFY183
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BFY183 Summary of contents
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HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA Hermetically sealed microwave package GHz 2 GHz esa ...
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Electrical Characteristics at T Parameter DC Characteristics Base-emitter forward voltage mA Collector-emitter cutoff current 0,3µ Collector -base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz mA 500 MHz C ...
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Micro-X1 Package 1.02 ±0 1.78 1.05 ±0.25 0.76 +0.05 0.1 -0.03 GXM05552 4 BFY 183 2007-08-16 ...
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Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...