BFY183 Infineon Technologies Corporation, BFY183 Datasheet - Page 2

• Manufacturer Part Number: BFY183
• Description: Hirel Npn Silicon Rf Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC Characteristics
Base-emitter forward voltage
I
Collector-emitter cutoff current
V
Collector -base cutoff current
V
V
Emitter-base cutoff current
V
V
DC current gain
I
1
E
C
This test assures V (BR)CE0 > 12V
CE
CB
CB
EB
EB
= 30 mA, I
= 5 mA, V
= 2 V, I
= 1 V, I
= 12 V, I
= 20 V, I
= 10 V, I
C
C
CE
C
B
E
E
= 0
= 0
= 0
= 0,3µA
= 0
= 0
= 6 V
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CEX
CBO
EBO
FE
FBE
min.
55
-
-
-
-
-
-
Values
typ.
90
-
-
-
-
-
-
max.
0.05
300
100
160
0.5
25
1
2007-08-16
BFY 183
Unit
V
µA
µA
-