RJK2009DPM Renesas Electronics Corporation., RJK2009DPM Datasheet - Page 5

• Manufacturer Part Number: RJK2009DPM
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK2009DPM
Rev.2.00, Aug.09.2004, page 5 of 6
100
20
40
60
80
0
0.003
0.001
0.03
0.01
0.3
0.1
5 V
Source to Drain Voltage
Vin
10 V
3
1
10 µ
Switching Time Test Circuit
Vin Monitor
10 V
0.4
10Ω
Reverse Drain Current vs.
Tc = 25°C
D = 1
0.5
Source to Drain Voltage
0.8
100 µ
Normalized Transient Thermal Impedance vs. Pulse Width
D.U.T.
V
1.2
GS
= 0 V
Pulse Test
1 m
R
V
1.6
V
= 100 V
L
SD
DD
Vout
Monitor
(V)
Pulse Width
2.0
10 m
td(on)
PW (s)
100 m
5
4
3
2
1
0
Vout
-25
Vin
V
θ
θ
P
DS
ch – c(t) = s (t) •
ch – c = 2.08°C/W, Tc = 25°C
DM
Gate to Source Cutoff Voltage
0
Case Temperature
= 10 V
10%
10%
vs. Case Temperature
25
90%
1
tr
γ
Waveform
PW
T
I
50
D
= 10 mA
0.1 mA
θ
75
td(off)
ch – c
10
90%
1 mA
D =
100
Tc (°C)
PW
90%
T
125
10%
100
t
f
150