RJK2009DPM Renesas Electronics Corporation., RJK2009DPM Datasheet - Page 2

• Manufacturer Part Number: RJK2009DPM
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK2009DPM
Electrical Characteristics
Notes: 4. Pulse test
Rev.2.00, Aug.09.2004, page 2 of 6
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
charge
Item
Symbol
V
R
V
Coss
(BR)DSS
Crss
Ciss
t
t
Qgs
Qgd
I
I
GS(off)
|y
V
DS(on)
Qg
d(on)
d(off)
Q
DSS
GSS
t
t
t
DF
rr
fs
r
f
rr
|
Min
200
3.0
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.029
2900
Typ
520
160
120
110
150
0.9
0.8
33
66
40
72
16
31
—
—
—
—
0.036
Max
4.5
1.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.1
1
Unit
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
V
S
A
A
C
V
I
I
V
V
I
I
V
f = 1 MHz
I
R
V
I
I
diF/dt = 100 A/ s
D
D
D
D
D
F
F
DS
GS
DS
DS
DD
L
= 40 A, V
= 40 A, V
= 10 mA, V
= 20 A, V
= 20 A, V
= 20 A, V
= 40 A
= 5 , Rg = 10
= 200 V, V
= 10 V, I
= 25 V, V
= 30 V, V
= 160 V, V
Test conditions
GS
GS
DS
GS
GS
D
GS
GS
= 1 mA
= 10 V
= 0
= 0,
= 10 V
= 10 V,
GS
DS
GS
= 0
= 0,
= 0
= 0
= 10 V,
Note4
(Ta = 25°C)
Note4
Note4