RJK2009DPM Renesas Electronics Corporation., RJK2009DPM Datasheet
RJK2009DPM
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RJK2009DPM Summary of contents
Page 1
... RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current ...
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... RJK2009DPM Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...
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... RJK2009DPM Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 100 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage Rev.2.00, Aug.09.2004, page ...
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... RJK2009DPM Static Drain to Source on State Resistance vs. Temperature 0 0.16 0.12 0.08 I 0.04 0 − Case Temperature Body-Drain Diode Reverse Recovery Time 1000 500 200 100 100 A / µ Reverse Drain Current Dynamic Input Characteristics 400 ...
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... RJK2009DPM Reverse Drain Current vs. Source to Drain Voltage 100 0.4 0.8 Source to Drain Voltage 25° 0.5 0.3 0.1 0.03 0.01 0.003 0.001 10 µ 100 µ Switching Time Test Circuit Vin Monitor 10Ω Vin 10 V Rev.2.00, Aug.09.2004, page ...
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... RENESAS Code SC-93 PRSS0003ZA-A 4.0 ± 0.3 5.45 ± 0.5 Ordering Information Part Name RJK2009DPM-E 30 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Aug.09.2004, page Package Name MASS[Typ.] TO-3PFM / TO-3PFMV 5.2g 15.6 ± ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...