RJK2009DPM Renesas Electronics Corporation., RJK2009DPM Datasheet - Page 4

• Manufacturer Part Number: RJK2009DPM
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK2009DPM
Rev.2.00, Aug.09.2004, page 4 of 6
1000
0.16
0.12
0.08
0.04
500
200
100
400
300
200
100
0.2
50
20
10
Static Drain to Source on State Resistance
5
2
1
0
−25
0
1
V
V
I
D
DS
GS
Reverse Drain Current
Dynamic Input Characteristics
= 40 A
0
Case Temperature
3
Body-Drain Diode Reverse
= 10 V
20
Gate Charge
25
vs. Temperature
Recovery Time
10
V
V
40
DD
DD
50
di / dt = 100 A / µs
V
I
30
= 50 V
D
= 160 V
GS
100 V
160 V
= 40 A
100 V
75
= 0, Ta = 25°C
50 V
60
Qg (nC)
100
100 125 150
Tc (°C)
Pulse Test
I
DR
V
10 A
80
20 A
300
GS
(A)
1000
100
16
12
8
4
0
100000
10000
30000
10000
1000
3000
1000
100
100
300
100
0.3
0.1
10
30
10
30
10
0.1
0.1
3
1
0
V
PW = 5 µs, duty < 1 %
R
t f
Drain to Source Voltage
GS
G
t r
Forward Transfer Admittance vs.
0.3
= 10 Ω
0.3
= 10 V, V
Switching Characteristics
Ciss
Coss
Crss
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
Drain Current
Tc = −25°C
t f
75°C
50
1
1
Drain Current
DD
25°C
t d(off)
= 100 V
3
3
100
I
I
D
10
D
10
V
Pulse Test
DS
(A)
(A)
V
f = 1 MHz
V
GS
DS
= 10 V
30
30
t d(on)
= 0
(V)
t r
100
100
150