NDB608A Fairchild Semiconductor, NDB608A Datasheet - Page 5

• Manufacturer Part Number: NDB608A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
GS
3000
2000
1000
300
200
100
50
105
100
Figure 36. Switching Test Circuit.
Figure 9. Capacitance Characteristics.
95
90
85
80
Figure 7. Breakdown Voltage
1
-50
I
D
R
= 250µA
Variation with Temperature.
-25
GEN
f = 1 MHz
V
GS
2
V
= 0 V
DS
0
T
J
3
V
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
IN
25
G
5
50
D
S
V
75
DD
1 0
R
100
L
DUT
20
125
C iss
C oss
3 0
C rss
V
150
(continued)
OUT
175
50
Output, V out
Input, V in
0.01
100
20
15
10
Figure 12. Switching Waveforms.
Figure 10. Gate Charge Characteristics.
Figure 8. Body Diode Forward Voltage
0.5
0.1
10
5
0
5
1
0
0.2
t
d(on)
I
10%
D
V
Variation with Current and
Temperature.
GS
= 36A
0.4
T = 125°C
= 0V
J
V
SD
t
50%
20
on
10%
, BODY DIODE FORWARD VOLTAGE (V)
0.6
Q
t
Pulse Width
90%
g
r
, GATE CHARGE (nC)
25°C
0.8
40
t
d(off)
-55°C
1
50%
V
DS
1.2
90%
= 12V
60
t
10%
off
90%
1.4
NDP608.SAM
t
Inverted
f
24
64
1.6
80