NDB608A Fairchild Semiconductor, NDB608A Datasheet - Page 4

• Manufacturer Part Number: NDB608A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
4 0
3 0
2 0
1 0
0
120
100
2.5
1.5
0.5
2
80
60
40
20
2
1
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics.
0
-50
Figure 1. On-Region Characteristics.
0
V
DS
V
-25
with Temperature.
I
= 10V
D
GS
3
= 18A
= 10V
1
V
GS
0
V
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
J
DS
4
, DRAIN-SOURCE VOLTAGE (V)
25
2
V
50
GS
5
T = -55°C
3
J
= 20V
75
100
6
1 2
4
25
1 0
125
125
8.0
7
5
7.0
6.0
5.0
150
175
8
6
1.2
1.1
0.9
0.8
0.7
0.6
0.5
3.5
2.5
1.5
0.5
1.8
1.6
1.4
1.2
0.8
0.6
1
3
2
1
0
Figure 4. On-Resistance Variation with
-50
Figure 6. Gate Threshold Variation
Figure 2. On-Resistance Variation with
2
1
0
0
V
-25
Drain Current and Temperature.
with Temperature.
Gate Voltage and Drain Current.
GS
V
GS
= 6V
20
2 0
= 10V
0
T = 125°C
J
T , JUNCTION TEMPERATURE (°C)
J
2 5
40
I
I
D
D
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
4 0
5 0
7.0
25°C
60
7 5
6 0
8.0
-55°C
1 0 0
80
V
1 0
I
1 2 5
D
DS
8 0
1 2
= 250µA
100
= V
2 0
1 5 0
GS
NDP608.SAM
120
1 0 0
1 7 5