NDB608A Fairchild Semiconductor, NDB608A Datasheet - Page 2

• Manufacturer Part Number: NDB608A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
DRAIN-SOURCE AVALANCHE RATINGS
E
I
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
AR
DSS
GSSF
GSSR
D(on)
FS
AS
GS(th)
DS(ON)
iss
oss
rss
DSS
Parameter
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
(T
C
= 25°C unless otherwise noted)
(Note 1)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
f = 1.0 MHz
D
D
D
DD
GS
DS
GS
GS
GS
DS
GS
GS
GS
DS
DS
= 250 µA
= 18 A
= 16 A
= 0 V
= 80 V,
= V
= 10 V, I
= 25 V, V
= 25 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V,
= 10 V,
= 10 V, V
GS
,
D
D
D
= 250 µA
DS
DS
GS
= 36 A
= 18 A
DS
= 0 V
= 10 V
= 0 V
= 0 V,
T
T
T
T
J
J
J
J
= 125°C
= 125°C
= 125°C
= 125°C
NDP608AE
NDP608BE
NDB608AE
NDB608BE
NDP608AE
NDB608AE
NDP608BE
NDB608BE
NDP608AE
NDB608AE
NDP608BE
NDB608BE
NDP608A
NDB608A
NDP608B
NDB608B
NDP608A
NDB608A
NDP608B
NDB608B
Type
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
Min
1.4
80
36
32
10
2
0.031
1370
0.05
17.5
Typ
390
140
2.9
2.3
0.042
0.045
1800
Max
-100
0.08
0.09
200
250
100
500
200
3.2
36
1
4
NDP608.SAM
Units
pF
pF
pF
mA
mJ
µA
nA
nA
A
V
V
V
A
A
S