NDB608A Fairchild Semiconductor, NDB608A Datasheet - Page 3

• Manufacturer Part Number: NDB608A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
(Note 2)
t
I
THERMAL CHARACTERISTICS
R
R
Notes:
1. NDP608A/608B and NDB608A/608B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
D(ON)
r
D(OFF)
f
S
SM
rr
rr
SD
g
gs
gd
JC
JA
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 2)
(T
C
Conditions
V
V
V
I
V
V
dI
D
I
= 25°C unless otherwise noted)
S
DD
GS
DS
GS
GS
S
= 36 A, V
/dt = 100 A/µs
= 18 A
= 40 V, I
= 10 V, R
= 64 V,
= 0 V,
= 0 V, I
S
GS
D
= 36 A,
GEN
= 36 A,
= 10V
= 7.5
T
J
= 125°C
NDP608AE
NDB608AE
NDP608BE
NDB608BE
NDP608AE
NDB608AE
NDP608BE
NDB608BE
NDP608A
NDB608A
NDP608B
NDB608B
NDP608A
NDB608A
NDP608B
NDB608B
Type
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
Min
0.91
0.81
Typ
113
11
37
69
46
25
88
8
6
Max
62.5
190
110
144
128
125
1.3
1.2
1.5
20
60
65
36
32
9
NDP608.SAM
Units
°C/W
°C/W
nC
nC
nC
nS
nS
nS
nS
ns
A
A
A
A
V
V
A