PSMN2R0-60ES NXP Semiconductors, PSMN2R0-60ES Datasheet - Page 9

• Manufacturer Part Number: PSMN2R0-60ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN2R0-60ES
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
(A)
I
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
gate-source voltage
-60
of gate-source voltage; typical values
0
0
2
min
60
typ
4
120
max
V
All information provided in this document is subject to legal disclaimers.
GS
T
003aaf747
j
(°C)
(V)
03aa35
180
6
Rev. 02 — 19 April 2011
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
10
8
6
4
2
0
of drain current; typical values
0
V
V
V
V
GS(pl)
V
DS
GS(th)
GS
GS
(V) = 4.5
Q
GS1
50
I
Q
PSMN2R0-60ES
D
GS
Q
GS2
Q
4.8
G(tot)
Q
100
GD
5.0
20.0
© NXP B.V. 2011. All rights reserved.
5.5
I
003aaa508
003aaf751
D
6.0
10.0
(A)
150
9 of 15