PSMN2R0-60ES NXP Semiconductors, PSMN2R0-60ES Datasheet - Page 10

• Manufacturer Part Number: PSMN2R0-60ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN2R0-60ES
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
DS
= 12V
40
48V
30V
80
(A)
I
S
200
160
120
80
40
120
0
0
All information provided in this document is subject to legal disclaimers.
Q
003aaf748
G
(nC)
160
T
Rev. 02 — 19 April 2011
0.3
j
= 175 ° C
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
0.6
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
T
10
j
0.9
5
4
3
2
10
= 25 ° C
as a function of drain-source voltage; typical
values
-1
003aaf750
V
SD
(V)
1.2
1
PSMN2R0-60ES
10
© NXP B.V. 2011. All rights reserved.
V
003aaf749
DS
(V)
C
C
C
iss
oss
rss
10
2
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