PSMN2R0-60ES NXP Semiconductors, PSMN2R0-60ES Datasheet - Page 8

• Manufacturer Part Number: PSMN2R0-60ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN2R0-60ES
Product data sheet
Fig 7.
Fig 9.
R
(m Ω )
DSon
(A)
I
D
200
150
100
12
10
50
8
6
4
2
0
0
of gate-source voltage; typical values
function of drain-source voltage; typical values
Drain-source on-state resistance as a function
Output characteristics: drain current as a
0
0
10
8
0.5
5
5
6
10
1
V
1.5
15
GS
All information provided in this document is subject to legal disclaimers.
V
(V) = 4
003aaf744
003aad674
V
GS
DS
4.5
(V)
(V)
20
2
Rev. 02 — 19 April 2011
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(pF)
10
10
10
10
C
5
4
3
2
5
4
3
2
1
0
10
−60
function of gate-source voltage, typical values
junction temperature
Input and reverse transfer capacitances as a
-1
0
1
PSMN2R0-60ES
60
max
min
typ
10
120
V
© NXP B.V. 2011. All rights reserved.
GS
C
C
003aaf746
003aad280
T
iss
(V)
rss
j
(°C)
10
180
2
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