PSMN2R0-60ES NXP Semiconductors, PSMN2R0-60ES Datasheet - Page 5

• Manufacturer Part Number: PSMN2R0-60ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN2R0-60ES
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Zth (j-mb)
(K/W)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
δ = 0.5
0.05
0.02
0.2
0.1
single shot
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 19 April 2011
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
10
-3
Conditions
see
Vertical in free air
Figure 4
10
-2
PSMN2R0-60ES
Min
-
-
10
P
-1
Typ
0.22
60
tp
T
t
© NXP B.V. 2011. All rights reserved.
p
003aaf752
(s)
δ =
-
Max
0.44
T
tp
t
1
Unit
K/W
K/W
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