GP1S58VJ000F Sharp Electronics, GP1S58VJ000F Datasheet - Page 8

• Manufacturer Part Number: GP1S58VJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S58VJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 5mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 20000ns
• Rise Time: 15000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

■ Design Considerations
● Design guide
● Degradation
● Parts
• Photodetector (qty. : 1)
• Photo emitter (qty. : 1)
• Material
Phototransistor
1) Prevention of detection error
2) Position of opaque board
This product is not designed against irradiation and incorporates non-coherent IRED.
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
This product is assembled using the below parts.
Infrared emitting diode
Black NORYL resin
Category
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
Opaque board shall be installed at place 4mm or more from the top of elements.
(Example)
(non-coherent)
Category
Case
Silicon (Si)
Material
Solder dip. (Sn−3Ag−0.5Cu)
Gallium arsenide (GaAs)
Lead frame plating
Maximum Sensitivity
Material
wavelength (nm)
800
4mm or more
8
Maximum light emitting
wavelength (nm)
wavelength (nm)
400 to 1 200
950
Sensitivity
I/O Frequency (MHz)
Response time (μs)
Sheet No.: D2-A02702EN
GP1S58VJ000F
0.3
3