GP1S58VJ000F Sharp Electronics, GP1S58VJ000F Datasheet - Page 6

• Manufacturer Part Number: GP1S58VJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S58VJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 5mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 20000ns
• Rise Time: 15000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Fig.7 Collector Current vs.
Fig.9 Response Time vs. Load Resistance
Fig.11 Frequency Response
Ambient Temperature
−15
−20
100
−10
0.1
−5
10
3
0
1
0.01
5
0
2
1
−25
10
2
V
I
T
C
a
CE
I
V
= 2mA
=25˚C
F
= 2V
=20mA
CE
0
=5V
Ambient temperature T
10
Load resistance R
3
t
t
d
s
0.1
Frequency f (Hz)
R
t
L
25
f
t
=10kΩ
r
10
4
50
L
(kΩ)
1
a
(˚C)
10
1kΩ 100Ω
75
5
V
I
T
C
a
CE
= 2mA
=25˚C
=2V
100
10
10
6
6
Fig.8 Collector-emitter Saturation Voltage
Fig.10 Test Circuit for Response Time
Fig.12 Collector Dark Current vs.
Input
R
D
10
vs. Ambient Temperature
10
10
10
10
Ambient Temperature
0.3
0.2
0.1
−10
−25
−9
−6
−7
−8
0
−25
V
I
I
F
C
V
CC
R
=40mA
=0.2mA
CE
L
=20V
0
0
Output
Ambient temperature T
Ambient temperature T
25
25
Output
Input
50
50
t
d
t
r
a
a
(˚C)
(˚C)
Sheet No.: D2-A02702EN
GP1S58VJ000F
75
75
t
s
100
100
t
f
10%
90%