GP1S58VJ000F Sharp Electronics, GP1S58VJ000F Datasheet - Page 10

• Manufacturer Part Number: GP1S58VJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S58VJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 5mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 20000ns
• Rise Time: 15000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

● Cleaning instructions
● Presence of ODC
Solvent cleaning :
Ultrasonic cleaning :
Recommended solvent materials :
Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.
The affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output,
cleaning time, PCB size or device mounting condition etc.
Please test it in actual using condition and confi rm that doesn't occur any defect before starting the ultrasonic
cleaning.
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
This product shall not contain the following materials.
And they are not used in the production process for this product.
Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)
Specifi c brominated fl ame retardants such as the PBB and PBDE are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated
diphenyl ethers (PBDE).
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Sheet No.: D2-A02702EN
GP1S58VJ000F