GP1S58VJ000F Sharp Electronics, GP1S58VJ000F Datasheet
GP1S58VJ000F
Specifications of GP1S58VJ000F
Related parts for GP1S58VJ000F
GP1S58VJ000F Summary of contents
Page 1
... GP1S58VJ000F ■ Description GP1S58VJ000F is a standard, phototransistor output, transmissive photointerrupter with opposing emitter and detector in a case, providing non-contact sensing. For this family of devices, the emitter and detector are insert case, resulting in a through-hole design. This device uses positioning pins to insure accurate placement and avoid miss-orientation of the emitter and detector ...
Page 2
... Product mass : approx. 0.5g Dip soldering material : Sn−3Ag−0.5Cu Anode Collector 1 3 Cathode Emitter 2 4 (Unit : mm) Top view +0.3 13.7 −0.3 +0.2 5.0 −0.1 B-Bʼ section 0 Aʼ Bʼ +0.3 0.4 −0.1 (10.3) 6 2.5 Tolerance ± 0.1 ± 0.2 2 GP1S58VJ000F Sheet No.: D2-A02702EN ...
Page 3
... Month of production A.D. Mark Month 2000 0 1 2001 1 2 2002 2 3 2003 3 4 2004 4 5 2005 5 6 2006 6 7 2007 7 8 2008 8 9 2009 9 10 2010 repeats year cycle Country of origin Japan, Indonesia or Philippines (Indicated on the packing case) Mark GP1S58VJ000F Sheet No.: D2-A02702EN ...
Page 4
... Symbol Condition 20mA 0. 20V CEO 5V 20mA 40mA 0.2mA CE(sat 2V 2mA GP1S58VJ000F MIN. TYP. MAX. 1.25 1.4 − − − 1 100 − 0.5 15 − 0.4 − − − = 100 Ω − Sheet No.: D2-A02702EN (T = 25˚C) a Unit V V μ μ s ...
Page 5
... Fig.2 Collector Power Dissipation vs. Ambient Temperature 120 100 100 (˚C) a Fig.4 Forward Current vs. Forward Voltage 100 10 1 Fig.6 Collector Current vs. Collector-emitter Voltage GP1S58VJ000F −25 Ambient temperature T (˚ =75˚C 25˚C a 0˚C 50˚C − 25˚ 0.5 1 1.5 2 2.5 3 Foward voltage V ( =25˚C ...
Page 6
... Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 75 100 (˚C) a Fig.10 Test Circuit for Response Time R D Input 1 10 (kΩ) Fig.12 Collector Dark Current vs = 2mA C T =25˚ 1kΩ 100Ω GP1S58VJ000F 0.3 I =40mA F I =0.2mA C 0.2 0 −25 Ambient temperature T (˚C) a Input Output Output Ambient Temperature −6 ...
Page 7
... Shield moving distance L (mm) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Fig.14 Detecting Position Characteristics (2) = 100 Sensor − 1.5 2 2.5 7 GP1S58VJ000F I =20mA =25˚C a Shield − + Sensor 50 0 −2 − ...
Page 8
... Case Black NORYL resin 4mm or more Maximum Sensitivity wavelength (nm) 800 Maximum light emitting Material wavelength (nm) Gallium arsenide (GaAs) Lead frame plating Solder dip. (Sn−3Ag−0.5Cu) 8 GP1S58VJ000F Sensitivity Response time (μs) wavelength (nm) 400 to 1 200 3 I/O Frequency (MHz) 950 0.3 Sheet No.: D2-A02702EN ...
Page 9
... Some fl ux, which is used in soldering, may crack the package due to synergistic effect of alcohol in fl ux and the rise in temperature by heat in soldering. Therefore, in using fl ux, please make sure that it does not have any infl uence on appearance and reliability of the photointerrupter. 9 GP1S58VJ000F Sheet No.: D2-A02702EN ...
Page 10
... Specifi c brominated fl ame retardants such as the PBB and PBDE are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). 10 GP1S58VJ000F Sheet No.: D2-A02702EN ...
Page 11
... Each partition should have 1 plastic bag. The 10 plastic bags containing a product are put in the packing case. Moltopren should be located after all product are settled (1 packing contains 1 000 pcs). Packing composition Partition Anti-static plastic bag Packing case 11 GP1S58VJ000F Moltopren Sheet No.: D2-A02702EN ...
Page 12
... SHARP. Express written permission is also required before any use of this publication may be made by a third party. · Contact and consult with a SHARP representative if there are any questions about the contents of this publication. 12 GP1S58VJ000F Sheet No.: D2-A02702EN ...