CYNSE70128-83BGI Cypress Semiconductor Corp, CYNSE70128-83BGI Datasheet - Page 22

• Manufacturer Part Number: CYNSE70128-83BGI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CYNSE70128-83BGI

• Operating Supply Voltage (min): 1.425V
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Package Type: BGA
• Mounting: Surface Mount
• Lead Free Status / Rohs Status: Not Compliant

Table 10-1. Command Codes
10.2
Table 10-2 lists the CMD bus fields that contain the CYNSE70128 command parameters and their respective cycles. Each
command is described separately in the subsections that follow.
Table 10-2. Command Parameters
10.3
The Read can be a single Read of a data array, a mask array, an SRAM, or a register location (CMD[2] = 0). It can be a burst
Read of the data (CMD[2] = 1) or mask array locations using an internal auto-incrementing address register (RBURADR).
A description of each type is provided in Table 10-3. A single-location Read operation lasts six cycles, as shown in Figure 10-1.
The burst Read adds two cycles for each successive Read. The SADR[23:21] bits supplied in the Read instruction cycle A drives
SADR[23:21] signals during the Read of an SRAM location.
Notes:
Document #: 38-02040 Rev. *F
10. For a description of CMD[9] and CMD[2], see subsections on search 288-bit configured tables and mixed-size searches with CFG_L HIGH.
CMD
8.
9.
Command Code
Learn
Search
Read
Write
The 288-bit-configured devices or 288-bit-configured quadrants within devices do not support the Learn instruction. Also, CLK1X must be less than 8 3MHz.
Use only CMD[8:0] and connect the CMD[10:9] to ground with CFG_L LOW.
[9, 10]
[8]
00
01
10
11
Commands and Command Parameters
Read Command
CYC
A
B
A
B
A
B
A
B
Index
Register
Register
Register
Index
Index
Global
Global
Global
Mask
Mask
Mask
Command
10
X
X
X
X
X
Learn
Search
Read
Write
[10]
[9]
[9]
[8]
288 bit: X
0 Normal
1 Parallel
0 Normal
1 Parallel
144-bit: 1
72 bit: 0
Write
Write
Write
Write
Reads one of the following: data array, mask array, device registers, or external SRAM.
Writes one of the following: data array, mask array, device registers, or external SRAM.
Searches the data array for a desired pattern using the specified register from the GMR array
and local mask associated with each data cell.
The device has internal storage for up to 16 comparands that it can learn. The device controller
can insert these entries at the next free address (as specified by the NFA register) using the
Learn instruction.
X
X
X
X
9
SADR[23] SADR[22] SADR[21]
SADR[23] SADR[22] SADR[21]
SADR[23] SADR[22] SADR[21]
SADR[23] SADR[22] SADR[21]
Successful Search Register
8
0
0
0
Index[2:0]
7
0
0
0
1: 144-bit
0: 72-bit
Mode
6
0
0
Description
Register Index
Register Index
Register Index
Global Mask
Global Mask
Global Mask
5
0
0
Comparand Register Index
Comparand Register Index
Comparand Register Index
[2:0]
[2:0]
[2:0]
4
0
0
3
0
0
72-bit or 144-bit: 0
0 in 2
1 in 1
0 = Single
0 = Single
0 = Single
0 = Single
1 = Burst
1 = Burst
1 = Burst
1 = Burst
288-bit:
nd
st
CYNSE70128
2
cycle
cycle
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1
0
0
0
0
1
1
1
1
0
0
0
1
1
0
0
1
1