MT4LC4M16F5TG-5 Micron Technology Inc, MT4LC4M16F5TG-5 Datasheet - Page 3

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MT4LC4M16F5TG-5

Manufacturer Part Number
MT4LC4M16F5TG-5
Description
Manufacturer
Micron Technology Inc
Type
FPMr
Datasheet

Specifications of MT4LC4M16F5TG-5

Organization
4Mx16
Density
64Mb
Address Bus
12b
Access Time (max)
25ns
Maximum Clock Rate
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
105mA
Pin Count
50
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT4LC4M16F5TG-5F
Manufacturer:
MICRON
Quantity:
15
DRAM REFRESH
fied levels, and the refresh requirements must be met in
order to retain stored data in the DRAM. The refresh
requirements are met by refreshing all rows in the
DRAM array at least once every 64ms. The recom-
mended procedure is to execute 4,096 CBR REFRESH
cycles, either uniformly spaced or grouped in bursts,
every 64ms. The MT4LC4M16F5 internally refreshes
one row for every CBR cycle, so executing 4,096 CBR
cycles covers all rows. The CBR REFRESH will invoke the
internal refresh counter for automatic RAS# address-
4 Meg x 16 FPM DRAM
D28_2.p65 – Rev. 5/00
The supply voltage must be maintained at the speci-
LOWER BYTE
UPPER BYTE
(DQ8-DQ15)
(DQ0-DQ7)
OF WORD
OF WORD
CASH#
CASL#
RAS#
WE#
STORED
X = NOT EFFECTIVE (DON'T CARE)
DATA
1
1
0
1
1
1
1
1
0
1
0
1
0
0
0
0
WORD and BYTE WRITE Example
INPUT
DATA
0
0
1
0
0
0
0
0
X
X
X
X
X
X
X
X
ADDRESS 0
WORD WRITE
INPUT
DATA
1
0
1
0
1
1
1
1
Figure 1
STORED
DATA
0
0
1
0
0
0
0
0
1
0
1
0
1
1
1
1
3
STORED
DATA
ing. Alternatively, RAS#-ONLY REFRESH capability is
inherently provided. However, with this method some
compatibility issues may become apparent. JEDEC
strongly recommends the use of CBR REFRESH for this
device.
STANDBY
memory cycle and decreases chip current to a reduced
standby level. The chip is preconditioned for the next
cycle during the RAS# HIGH time.
0
0
1
0
0
0
0
0
1
0
1
0
1
1
1
1
Returning RAS# and CAS# HIGH terminates a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
LOWER BYTE WRITE
INPUT
DATA
ADDRESS 1
1
1
0
1
1
1
1
1
X
X
X
X
X
X
X
X
INPUT
DATA
STORED
DATA
1
0
1
0
1
1
1
1
1
1
0
1
1
1
1
1
4 MEG x 16
FPM DRAM
©2000, Micron Technology, Inc.
OBSOLETE

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