LH28F016SUT-10 Sharp Electronics, LH28F016SUT-10 Datasheet - Page 20

• Manufacturer Part Number: LH28F016SUT-10
• Manufacturer: Sharp Electronics

Specifications of LH28F016SUT-10

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 4.5 to 5.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 60mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

LH28F016SU
DC Characteristics
20
SYMBOL
V
3.5
I
I
I
I
I
I
CCR
CCR
I
CCES
I
I
CCW
CCS
CCD
CCE
I
PPS
PPD
CC
I
LO
IL
»
Pin Set Low for 5 V Operations
1
2
= 5.0 V ± 0.5 V, T
Input Load Current
Output Leakage Current
V
V
Current
V
V
V
V
V
Current
V
V
Current
CC
CC
CC
CC
CC
CC
CC
PP
PP
Standby Current
Deep Power-Down
Block Erase Current
Standby Current
Deep Power-Down
Read Current
Read Current
Write Current
Erase Suspend
PARAMETER
A
= 0°C to +70°C
TYP.
0.2
50
30
25
18
5
2
1
5
MIN.
MAX.
±10
±10
±1
10
60
35
35
10
25
4
5
5
UNITS
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
CE
BYTE, WP, 3/5
GND ±0.2 V
V
CE
BYTE, WP, 3/5
RP
V
CMOS: CE
BYTE = GND ±0.2 V or V
Inputs = GND ±0.2 V or V
TTL: CE
BYTE = V
Inputs = V
f = 10 MHz, I
V
CMOS: CE
BYTE = V
Inputs = GND ±0.2 V or V
TTL: CE
BYTE = V
Inputs = V
f = 5 MHz, I
Word/Byte Write in Progress
Block Erase in Progress
CE
Block Erase Suspended
V
RP
CC
CC
CC
CC
CC
CC
PP
»
0
»
0
»
»
0
»
= GND ±0.2 V
= GND ±0.2 V
, CE
, CE
, CE
= V
= V
= V
= V
= V
= V
16M (1M × 16, 2M × 8) Flash Memory
V
CC
CC
CC
CC
CC
CC
CC
»
0
»
0
TEST CONDITIONS
»
1
»
1
»
1
, CE
, CE
, RP
, RP
IL
IL
IH
CC
IH
= V
»
0
»
0
MAX., V
MAX., V
MAX.,
MAX.,
MAX.,
MAX.,
OUT
, CE
, CE
or V
or V
or V
OUT
or V
±0.2 V or GND ±0.2 V
»
1
»
1
IH
»
»
»
»
= V
= V
= V
= V
= V
= V
= 0 mA
»
1
IH
»
1
IH
IL
IL
= 0 mA
= GND ±0.2 V
= GND ±0.2 V
CC
IH
CC
IH
IL,
IL,
IN
IN
or V
= V
= V
±0.2 V
±0.2 V or
CC
CC
CC
CC
CC
IL
±0.2 V
±0.2 V
±0.2 V
or GND
or GND
1, 3, 4
1, 3, 4
NOTE
1, 2
1,4
1
1
1
1
1
1
1