BUK9509-75A NXP Semiconductors, BUK9509-75A Datasheet - Page 4

• Manufacturer Part Number: BUK9509-75A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9509-75A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 226 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 185 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9509-75A,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9509-75A_3
Product data sheet
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Z th(j-mb)
0.001
(K/W)
0.01
0.1
1
10 -6
0.2
0.1
0.02
0.05
δ = 0.05
Single Shot
Conditions
see
vertical in still air
10 -5
Figure 4
Rev. 03 — 22 September 2008
10 -4
10 -3
10 -2
N-channel TrenchMOS logic level FET
P
Min
-
-
10 -1
BUK9509-75A
t p
T
t p (s)
δ
Typ
-
60
03nb45
=
t p
T
t
© NXP B.V. 2008. All rights reserved.
1
Max
0.65
-
Unit
K/W
K/W
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