BUK9509-75A,127 NXP Semiconductors, BUK9509-75A,127 Datasheet

MOSFET N-CH 75V 75A TO220AB

BUK9509-75A,127

Manufacturer Part Number
BUK9509-75A,127
Description
MOSFET N-CH 75V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9509-75A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
8840pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0085 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
75 A
Power Dissipation
230000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056282127
BUK9509-75A
BUK9509-75A
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol Parameter
V
I
P
Avalanche ruggedness
E
Static characteristics
R
D
DS
tot
DS(AL)S
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
BUK9609-75A
N-channel TrenchMOS logic level FET
Rev. 03 — 22 September 2008
drain-source voltage T
drain current
total power
dissipation
non-repetitive
drain-source
avalanche energy
drain-source
on-state resistance
Quick reference
Conditions
V
Figure
T
I
R
T
V
T
V
T
see
D
j
mb
j(init)
j
j
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C; see
= 75 A; V
Figure 15
= 25 °C; see
= 5 V; T
= 50 Ω; V
= 4.5 V; I
= 5 V; I
= 25 °C; unclamped
3; see
D
sup
j
j
= 25 °C; see
≤ 175 °C
D
= 25 A;
Figure 1
GS
≤ 75 V;
= 25 A;
Figure
= 5 V;
Figure 2
12;
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
-
7.6
Max
75
75
230
562
9.95
9
Unit
V
A
W
mJ
mΩ
mΩ

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BUK9509-75A,127 Summary of contents

Page 1

BUK9609-75A N-channel TrenchMOS logic level FET Rev. 03 — 22 September 2008 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK9609-75A D2PAK Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) 4 ...

Page 3

... NXP Semiconductors 120 I der (%) 100 Fig 1. Normalized continuous drain current as a function of mounting base temperature 1000 I D (A) 100 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9609-75A_3 Product data sheet 03aa24 120 P der (%) 150 200 0 T (°C) mb Fig 2 ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient 1 Z th(j-mb) (K/W) δ = 0.05 0.2 0.1 0.1 0.05 0.02 0.01 Single Shot 0.001 10 -6 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics C input capacitance iss C output capacitance oss C reverse transfer rss capacitance ...

Page 6

... NXP Semiconductors - ( min typ - Fig 5. Sub-threshold drain current as a function of gate-source voltage 400 350 (V) = 300 250 200 150 100 Fig 7. Output characteristics: drain current as a function of drain-source voltage; typical values BUK9609-75A_3 Product data sheet 03aa36 2.5 V GS(th) (V) 2 1.5 max 1 0 ...

Page 7

... NXP Semiconductors 140 g fs (S) 120 100 Fig 9. Forward transconductance as a function of drain current; typical values (V) 4 3.5 3 2.5 2 1 Fig 11. Gate-source voltage as a function of gate charge; typical values BUK9609-75A_3 Product data sheet 03nb38 120 I D (A) 100 60 80 100 I D (A) Fig 10. Transfer characteristics: drain current as a function of gate-source voltage ...

Page 8

... NXP Semiconductors 120 I S (A) 100 175 0.0 0.2 0.4 0.6 Fig 13. Reverse diode current as a function of reverse diode voltage; typical values Fig 15. Normalized drain-source on-state resistance factor as a function of junction temperature BUK9609-75A_3 Product data sheet 03nb36 16000 C (pF) 14000 12000 10000 ...

Page 9

... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 Fig 16. Package outline SOT404 (D2PAK) BUK9609-75A_3 Product data sheet 2.5 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9609-75A separated from data sheet BUK9509_9609_75A-02. BUK9509_9609_75A-02 20001106 BUK9509_9609_75A-01 20001010 ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...

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