BUK9509-75A NXP Semiconductors, BUK9509-75A Datasheet
BUK9509-75A
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BUK9509-75A Summary of contents
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... BUK9509-75A N-channel TrenchMOS logic level FET Rev. 03 — 22 September 2008 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Figure 3; see GS j ≤ 10 µs; pulsed; see ° °C; see Figure 2 mb ≤ 50 µs pulsed °C mb ≤ 10 µs; pulsed ° Rev. 03 — 22 September 2008 BUK9509-75A N-channel TrenchMOS logic level FET Graphic symbol mbb076 3 Version SOT78A Min Max - - Figure Figure 3 - ...
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... P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature R DSon = D. δ Rev. 03 — 22 September 2008 BUK9509-75A N-channel TrenchMOS logic level FET Min Max = 562 GS 03na19 50 100 150 T (°C) mb 03nb44 100 100 (V) 100 © NXP B.V. 2008. All rights reserved. ...
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... Single Shot 0.001 10 -6 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9509-75A_3 Product data sheet Conditions see Figure 4 vertical in still air Rev. 03 — 22 September 2008 BUK9509-75A N-channel TrenchMOS logic level FET Min Typ Max - - 0. 03nb45 t p δ ...
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... °C j from source lead to source bond pad ° °C; see Figure /dt = -100 A/µ - ° Rev. 03 — 22 September 2008 BUK9509-75A N-channel TrenchMOS logic level FET Min Typ Max 1 500 - 0. 100 - 2 ...
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... V (V) GS Fig 6. Gate-source threshold voltage as a function of junction temperature 03nb41 R DSon (mΩ 2 (V) Fig 8. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 03 — 22 September 2008 BUK9509-75A N-channel TrenchMOS logic level FET 03aa33 max typ min 0 60 120 ( ° ...
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... I D (A) Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03nb37 R DSon (mΩ 100 150 Q G (nC) Fig 12. Drain-source on-state resistance as a function of drain current; typical values Rev. 03 — 22 September 2008 BUK9509-75A N-channel TrenchMOS logic level FET 175 0.0 1.0 2 ...
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... V SD (V) Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 2.4 a 1.6 0.8 0 − 120 Rev. 03 — 22 September 2008 BUK9509-75A N-channel TrenchMOS logic level FET 03nb43 0 0.01 0 (V) 03nb25 180 T (°C) j © NXP B.V. 2008. All rights reserved. ...
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... 0.7 15.8 6.4 10.3 15.0 2.54 0.4 15.2 5.9 9.7 13.5 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 Rev. 03 — 22 September 2008 BUK9509-75A N-channel TrenchMOS logic level FET base ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9509-75A separated from data sheet BUK9509_9609_75A-02. • Package outline updated, see BUK9509_9609_75A-02 20001106 ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 22 September 2008 BUK9509-75A N-channel TrenchMOS logic level FET © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 03 — 22 September 2008 Document identifier: BUK9509-75A_3 All rights reserved. ...