BUK9509-75A NXP Semiconductors, BUK9509-75A Datasheet - Page 10

• Manufacturer Part Number: BUK9509-75A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9509-75A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 226 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 185 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9509-75A,127

NXP Semiconductors
8. Revision history
Table 7.
BUK9509-75A_3
Product data sheet
Document ID
BUK9509-75A_3
Modifications:
BUK9509_9609_75A-02
BUK9509_9609_75A-01
Revision history
Release date
20080922
20001106
20001010
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•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9509-75A separated from data sheet BUK9509_9609_75A-02.
Package outline updated, see
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 03 — 22 September 2008
Figure
16.
Change notice
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-
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N-channel TrenchMOS logic level FET
BUK9509-75A
Supersedes
BUK9509_9609_75A-02
BUK9509_9609_75A-01
-
© NXP B.V. 2008. All rights reserved.
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