LM98714BCMT National Semiconductor, LM98714BCMT Datasheet - Page 8

• Manufacturer Part Number: LM98714BCMT
• Manufacturer: National Semiconductor

Specifications of LM98714BCMT

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LVDS Output DC Specifications
Power Supply Specifications
Input Sampling Circuit Specifications
Electrical Characteristics
Symbol
The following specifications apply for VA = VD = VR = VC = 3.3V, C
Boldface limits apply for T
PWR
V
V
V
V
I
I
V
I
IR
ID
IC
IHL
ILC
OS
IA
IHC
ILC
OD
OS
IN
VD Digital Output Driver Supply
Output Driver Supply Current
LVDS Output Offset Voltage
Output Short Circuit Current
VC CCD Timing Generator
Average Power Dissipation
Differential Output Voltage
VA Analog Supply Current
VR Digital Supply Current
High Threshold Voltage
Low Threshold Voltage
Input Voltage Level
Input High Current
Input Low Current
CMOS Clock
CMOS Clock
CMOS Clock
CMOS Clock
Parameter
Current
A
= T
MIN
to T
MAX
(Continued)
; all other limits T
SH, CLK1=Φ1A, CLK2=Φ2A,
CDS Gain=1x, PGA Gain=1x
CMOS Output Data Format
with Data Outputs Disabled
CMOS Output Data Format
CMOS Output Data Format
LVDS Output Data Format
LVDS Output Data Format
LVDS Output Data Format
CDS Gain=2x, PGA Gain=
(ATE Loading of CMOS
(ATE Loading of CMOS
(ATE Loading of CMOS
Typical sensor outputs:
V
CLK3=ΦB, CLK4=ΦC,
CLK5=RS, CLK6=CP
VA Low Power State
OUT
VA Normal State
VR Normal State
Outputs
Outputs
Outputs
INCLK- = DGND
(LVDS Outputs)
(Powerdown)
Conditions
= 0V, R
R
L
= 100Ω
1x
8
>
>
>
A
= 25˚C.
L
50pF)
50pF)
50pF)
= 100Ω
L
= 10pF, and f
1.17
Min
180
350
380
2.0
0.5
60
12
30
15
12
INCLK
= 15MHz unless otherwise specified.
(Note 8)
1.23
0.05
1.22
Typ
328
505
610
7.9
2.3
97
23
64
47
47
Max
-150
280
450
125
650
700
0.8
1.3
32
75
55
40
12
Units
Vp-p
mW
mW
mV
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
V
V
V