MT4LSDT1664HY-133D1 Micron Technology Inc, MT4LSDT1664HY-133D1 Datasheet - Page 25

• Manufacturer Part Number: MT4LSDT1664HY-133D1
• Description: MODULE SDRAM 128MB 144SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT4LSDT1664HY-133D1

• Memory Type: SDRAM
• Memory Size: 128MB
• Speed: 133MHz
• Features: -
• Package / Case: 144-SODIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 20:
PDF: 09005aef8078bc7c/Source: 09005aef8078bcd3
SD4C4_8_16X64AG.fm - Rev. D 1/07 EN
Parameter/Condition
WRITE cycle time
Serial Presence-Detect EEPROM AC Operating Conditions (Continued)
Notes appear below; All voltages referenced to V
Notes:
1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
the falling or rising edge of SDA.
sequence to the end of the EEPROM internal erase/program cycle. During the WRITE cycle,
the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resistor, and
the EEPROM does not respond to its slave address.
32MB, 64MB, 128MB (x64, SR) 168-Pin SDRAM UDIMM
25
SS
; V
t
DDSPD
WRC) is the time from a valid stop condition of a write
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
t
= +2.3V to +3.6V
WRC
Min
–
Serial Presence-Detect
Max
©2002 Micron Technology, Inc. All rights reserved.
10
Units
ms
Notes
4