MT46V64M8P-5B:J Micron Technology Inc, MT46V64M8P-5B:J Datasheet - Page 40

• Manufacturer Part Number: MT46V64M8P-5B:J
• Description: IC SDRAM 512MB 200MHZ 66TSOP
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V64M8P-5B:J

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 14:
Figure 15:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. O; Core DDR Rev. D 2/11 EN
Full Drive Pull-Down Characteristics
Full Drive Pull-Up Characteristics
39. Reduced output drive curves:
38d. The driver pull-up current variation within nominal limits of voltage and temper-
39b. The driver pull-down current variation, within nominal voltage and temperature
39d. The driver pull-up current variation, within nominal voltage and temperature
38e. The full ratio variation of MAX to MIN pull-up and pull-down current should be
39a. The full driver pull-down current variation from MIN to MAX process; tempera-
39c. The full driver pull-up current variation from MIN to MAX process; temperature
38f. The full ratio variation of the nominal pull-up to pull-down current should be
-100
-120
-140
-160
-180
-200
160
140
120
100
-2 0
-4 0
-6 0
-8 0
80
60
40
20
0
0
0.0
0. 0
ature is expected, but not guaranteed, to lie within the inner bounding lines of the
V-I curve of Figure 15 on page 40.
between 0.71 and 1.4 for drain-to-source voltages from 0.1V to 1.0V at the same
voltage and temperature.
unity ±10% for device drain-to-source voltages from 0.1V to 1.0V.
ture and voltage will lie within the outer bounding lines of the V-I curve of
Figure 16 on page 41.
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 16 on page 41.
and voltage will lie within the outer bounding lines of the V-I curve of Figure 17.
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 17 on page 41.
0 . 5
0.5
1. 0
1.0
V
DD
V
Q - V
OUT
40
(V)
OUT
(V)
1 . 5
1.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
2. 0
2.0
512Mb: x4, x8, x16 DDR SDRAM
2 . 5
2.5
©2000 Micron Technology, Inc. All rights reserved.