MT46V64M8P-5B:J Micron Technology Inc, MT46V64M8P-5B:J Datasheet - Page 4

• Manufacturer Part Number: MT46V64M8P-5B:J
• Description: IC SDRAM 512MB 200MHZ 66TSOP
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V64M8P-5B:J

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

State Diagram
Figure 2:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core1.fm - 512Mb DDR: Rev. 0; Core DDR Rev. D 2/11 EN
Simplified State Diagram
Note:
applied
Power
This diagram represents operations within a single bank only and does not capture concur-
rent operations in other banks.
ACT = ACTIVE
BST = BURST TERMINATE
CKEH = Exit power-down
CKEL = Enter power-down
EMR = Extended mode register
LMR = LOAD MODE REGISTER
MR = Mode register
WRITE
Precharge
all banks
Power
PRE
EMR
LMR
PRE
WRITE A
MR
on
Write A
power-
Active
down
Write
CKE LOW
WRITE
LMR
CKE HIGH
4
WRITE A
PRE
precharged
Precharge
all banks
PREALL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
active
ACT
Row
PRE
Idle
READ A
PRE = PRECHARGE
PREALL = PRECHARGE all banks
READ A = READ with auto precharge
REFA = AUTO REFRESH
REFS = Enter self refresh
REFSX = Exit self refresh
WRITE A = WRITE with auto precharge
CKEH
READ
REFS
READ A
PRE
512Mb: x4, x8, x16 DDR SDRAM
REFSX
CKEL
READ
Precharge
REFA
refresh
power-
down
Self
BST
Read A
Burst
Read
stop
Automatic sequence
Command sequence
READ A
©2000 Micron Technology, Inc. All rights reserved.
refresh
Auto
READ
State Diagram