DS99R102VSX/NOPB National Semiconductor, DS99R102VSX/NOPB Datasheet - Page 2

• Manufacturer Part Number: DS99R102VSX/NOPB
• Description: IC DESERIALIZ 40MHZ 24BIT 48TQFP
• Manufacturer: National Semiconductor

Specifications of DS99R102VSX/NOPB

• Function: Deserializer
• Data Rate: 960Mbps
• Input Type: LVTTL/LVCMOS
• Output Type: LVDS
• Number Of Inputs: 1
• Number Of Outputs: 24
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 48-TQFP, 48-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DS99R102VSX

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LVCMOS/LVTTL DC SPECIFICATIONS
V
V
V
I
V
V
I
I
LVDS DC SPECIFICATIONS
V
V
I
Symbol
IN
OS
OZ
IN
IH
IL
CL
OH
OL
TH
TL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Supply Voltage (V
LVCMOS/LVTTL Input Voltage
LVCMOS/LVTTL Output Voltage
LVDS Receiver Input Voltage
LVDS Driver Output Voltage
LVDS Output Short Circuit Duration
Junction Temperature
Storage Temperature
Lead Temperature
Maximum Package Power Dissipation Capacity Package
48L TQFP
(Soldering, 4 seconds)
De-rating:
High Level Voltage
Low Level Input Voltage
Input Clamp Voltage
Input Current
High Level Output Voltage
Low Level Output Voltage
Output Short Circuit Current
TRI-STATE
Differential Threshold High
Voltage
Differential Threshold Low
Voltage
Input Current
Parameter
DD
®
)
Output Current
1/θ
JA
−0.3V to (V
−0.3V to (V
I
(Note 9)
V
I
I
V
(Note 9)
RPWDNB, REN = 0V
V
V
V
V
CL
OH
OL
IN
OUT
OUT
CM
IN
IN
°C/W above +25°C
= −18 mA
= +4 mA
−65°C to +150°C
= −4 mA
= 0V or 3.6V
= +2.4V, V
= 0V, V
= +1.2V
= 0V
= 0V or 2.4V
−0.3V to 3.9V
−0.3V to 3.9V
−0.3V to +4V
(Note 1)
DD
DD
DD
Conditions
+150°C
+260°C
+0.3V)
+0.3V)
= 3.6V
DD
10 ms
= 3.6V
2
Supply Voltage (V
Operating Free Air
Clock Rate
Supply Noise
Recommended Operating
Conditions
DS99R101
θ
θ
DS99R102
θ
θ
ESD Rating (HBM)
Temperature (T
JA
JC
JA
JC
Tx: DIN[23:0], TCLK,
TPWDNB, DEN, TRFB,
DCAOFF, DCBOFF,
VODSEL
Rx: RPWDNB, RRFB,
REN
Tx: DIN[23:0], TCLK,
TPWDNB, DEN, TRFB,
DCAOFF, DCBOFF,
VODSEL
Rx: RPWDNB, RRFB,
REN
Rx: ROUT[23:0], RCLK,
LOCK
Rx: ROUT[23:0], RCLK,
LOCK
Rx: R
IN+
Pin/Freq.
DD
A
, R
)
)
IN−
Min
3.0
0
3
45.8 (4L*); 75.4 (2L*) °C/W
45.4 (4L*); 75.0 (2L*)°C/W
GND
GND 0.33
Min
−10
−20
−40
−15
−50
Nom
2.0
2.3
+25
3.3
−0.8
±0.4
Typ
−70
1.5
1.5
3.0
±5
±5
±100
Max
+70
3.6
40
−110
±200
±200
Max
−1.5
V
+10
+20
V
+15
+50
0.8
0.5
21.0°C/W
21.1°C/W
DD
DD
*JEDEC
≥
±8 kV
mV
Units
MHz
°C
V
Units
P-P
mA
mV
mV
µA
µA
µA
µA
µA
V
V
V
V
V