BUK9515-100A NXP Semiconductors, BUK9515-100A Datasheet - Page 8

• Manufacturer Part Number: BUK9515-100A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9515-100A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9515-100A,127

NXP Semiconductors
BUK9515-100A
Product data sheet
Fig 15. Input, output and reverse transfer capacitances
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(nF)
C
20
15
10
5
0
10
as a function of drain-source voltage; typical
values
V
V
−2
GS
GS
C
C
C
oss
rss
= 0 V; f = 1 MHz
= 0 V
iss
10
−1
1
(A)
I
D
100
80
60
40
20
10
0
0
All information provided in this document is subject to legal disclaimers.
V
003aaf376
DS
(V)
10
Rev. 3 — 19 April 2011
2
T
j
0.4
= 175 °C
Fig 16. Gate-source voltage as a function of gate
V
0.8
(V)
GS
T
5
4
3
2
1
0
j
V
charge; typical values
T
= 25 °C
0
SDS
j
= 25 °C; I
003aaf378
(V)
N-channel TrenchMOS logic level FET
20
1.2
V
D
DS
= 25 A
= 14 V
40
BUK9515-100A
60
V
DS
© NXP B.V. 2011. All rights reserved.
80
= 80 V
Q
003aaf377
G
(nC)
100
8 of 13