BUK9515-100A NXP Semiconductors, BUK9515-100A Datasheet - Page 10

• Manufacturer Part Number: BUK9515-100A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9515-100A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9515-100A,127

NXP Semiconductors
8. Revision history
Table 7.
BUK9515-100A
Product data sheet
Document ID
BUK9515-100A v.3
Modifications:
BUK9515_9615-100A_2
Revision history
Release date
20110419
19991101
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9515-100A separated from data sheet BUK9515_9615-100A_2.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 3 — 19 April 2011
Change notice Supersedes
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-
N-channel TrenchMOS logic level FET
BUK9515-100A
-
BUK9515_9615-100A_2
© NXP B.V. 2011. All rights reserved.
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