BUK9515-100A NXP Semiconductors, BUK9515-100A Datasheet - Page 4

• Manufacturer Part Number: BUK9515-100A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9515-100A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9515-100A,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9515-100A
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
(A)
10
I
10
10
D
10
-1
3
2
1
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
1
mb
Thermal characteristics
= 25 °C; I
Limit R
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
DSon
DM
= V
is single pulse
DS
/ I
D
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
10
1
−6
All information provided in this document is subject to legal disclaimers.
δ = 0.5
10
0.05
0.02
0.2
0.1
10
0
DC
−5
Conditions
in free air
Rev. 3 — 19 April 2011
10
−4
10
−3
10
−2
P
10
t
p
−1
T
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1
δ =
10
t
p
N-channel TrenchMOS logic level FET
(s)
2
T
t
t
p
t
100 μ s
10 ms
100 ms
10
1 ms
p
=10 μ s
BUK9515-100A
Min
-
-
V
DS
(V)
Typ
-
60
© NXP B.V. 2011. All rights reserved.
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Max
0.65
-
10
3
Unit
K/W
K/W
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