MT48LC32M16A2TG-7E Micron Technology Inc, MT48LC32M16A2TG-7E Datasheet - Page 61

• Manufacturer Part Number: MT48LC32M16A2TG-7E
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC32M16A2TG-7E

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 125mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

Figure 45:
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
DQML, DQMU
COMMAND
BA0, BA1
A11, A12
A0–A9,
DQM/
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
WRITE – Without Auto Precharge
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, BL = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 14ns to 15ns is required between <D
3. x16: A11 and A12 = “Don’t Care”; x8: A12 = “Don’t Care.”
DISABLE AUTO PRECHARGE
quency.
t CMS
t CL
t DS
COLUMN m 2
WRITE
BANK
T2
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
61
t DS
D
IN
IN
T5
NOP
m + 3
m> and the PRECHARGE command, regardless of fre-
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t
WR
T6
NOP
3
512Mb: x4, x8, x16 SDRAM
PRECHARGE
SINGLE BANK
ALL BANKs
T7
BANK
©2000 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t RP
NOP
T8
ACTIVE
ROW
ROW
BANK
T9
Don’t Care