SI7913DN-T1-E3 Siliconix / Vishay, SI7913DN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7913DN-T1-E3
• Description: DUAL P-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI7913DN-T1-E3

• Channel Type: P
• Current, Drain: -7.4 A
• Fall Time: 225 ns
• Gate Charge, Total: 24 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: PowerPAK 1212-8
• Polarization: P-Channel
• Power Dissipation: 1.3 W
• Resistance, Drain To Source On: 0.037 Ohm
• Resistance, Thermal, Junction To Case: 5 °C/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 44 °C/W
• Time, Rise: 110 ns
• Time, Turn-off Delay: 110 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 20 S
• Voltage, Breakdown, Drain To Source: –30 V
• Voltage, Diode Forward: –1.2 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: –1.2 V
• Voltage, Gate To Source: ±8 V
• Trenchfet® Power Mosfet: 1.8 V Rated
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Si7913DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
I
T
D
J
= 250
25
- Temperature (°C)
10
-3
Single Pulse
µA
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
0.1
100
10
Limited by R
-2
Safe Operating Area, Junction-to-Ambient
* V
Limited
I
D(on)
125
GS
Single Pulse
T
A
> minimum V
V
= 25 °C
DS
150
DS(on) *
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
1
10
-1
BVDSS Limited
GS
at which R
I
DM
10
DS(on)
Limited
50
40
30
20
10
0.001
0
1
is specified
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
Single Pulse Power, Junction-to-Ambient
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
Time (s)
- T
A
t
1
= P
S-83050-Rev. C, 29-Dec-08
1
t
Document Number: 72615
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 65 °C/W
100
600
600