SI7913DN-T1-E3 Siliconix / Vishay, SI7913DN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7913DN-T1-E3
• Description: DUAL P-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI7913DN-T1-E3

• Channel Type: P
• Current, Drain: -7.4 A
• Fall Time: 225 ns
• Gate Charge, Total: 24 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: PowerPAK 1212-8
• Polarization: P-Channel
• Power Dissipation: 1.3 W
• Resistance, Drain To Source On: 0.037 Ohm
• Resistance, Thermal, Junction To Case: 5 °C/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 44 °C/W
• Time, Rise: 110 ns
• Time, Turn-off Delay: 110 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 20 S
• Voltage, Breakdown, Drain To Source: –30 V
• Voltage, Diode Forward: –1.2 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: –1.2 V
• Voltage, Gate To Source: ±8 V
• Trenchfet® Power Mosfet: 1.8 V Rated
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72615
S-83050-Rev. C, 29-Dec-08
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
Source-Drain Diode Forward Voltage
V
I
GS
D
DS
On-Resistance vs. Drain Current
0.2
= 7.4 A
= 1.8 V
= 10 V
4
4
V
SD
Q
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
T
I
D
J
Gate Charge
= 150 °C
- Drain Current (A)
8
8
0.6
12
12
0.8
V
V
T
GS
GS
J
16
16
= 25 °C
= 2.5 V
= 4.5 V
1.0
20
20
1.2
2100
1800
1500
1200
0.10
0.08
0.06
0.04
0.02
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
D
- 25
C
V
I
= 1.5 A
D
rss
GS
= 7.4 A
1
4
= 4.5 V
V
V
T
GS
0
DS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
oss
25
Capacitance
2
8
I
D
= 7.4 A
50
Vishay Siliconix
C
12
3
iss
75
Si7913DN
www.vishay.com
100
16
4
125
150
20
5
3