SI7913DN-T1-E3 Siliconix / Vishay, SI7913DN-T1-E3 Datasheet

SI7913DN-T1-E3

Manufacturer Part Number

SI7913DN-T1-E3

Description

DUAL P-CHANNEL 20-V (D-S) MOSFET

Manufacturer

Siliconix / Vishay

Datasheet

1.SI7913DN-T1-E3.pdf (6 pages)

Specifications of SI7913DN-T1-E3

Channel Type

Current, Drain

-7.4 A

Fall Time

225 ns

Gate Charge, Total

24 nC

Operating And Storage Temperature

–55 to +150 °C

Package Type

PowerPAK 1212-8

Polarization

P-Channel

Power Dissipation

1.3 W

Resistance, Drain To Source On

0.037 Ohm

Resistance, Thermal, Junction To Case

5 °C/W

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

–55 °C

Thermal Resistance, Junction To Ambient

44 °C/W

Time, Rise

110 ns

Time, Turn-off Delay

110 ns

Time, Turn-on Delay

30 ns

Transconductance, Forward

20 S

Voltage, Breakdown, Drain To Source

–30 V

Voltage, Diode Forward

–1.2 V

Voltage, Drain To Source

–20 V

Voltage, Forward, Diode

–1.2 V

Voltage, Gate To Source

±8 V

Trenchfet® Power Mosfet

1.8 V Rated

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

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Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 72615

S-83050-Rev. C, 29-Dec-08

Ordering Information: Si7913DN-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case

PRODUCT SUMMARY

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

- 20

(V)

3.30 mm

PowerPAK 1212-8

Bottom View

Si7913DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

0.037 at V

0.048 at V

0.066 at V

DS(on)

= 150 °C)

Dual P-Channel 20-V (D-S) MOSFET

= - 4.5 V

= - 2.5 V

= - 1.8 V

(Ω)

3.30 mm

b, c

= 25 °C, unless otherwise noted

- 7.4

- 6.5

- 55

Steady State

(A)

t ≤ 10 s

= 25 °C

= 85 °C

= 25 °C

= 85 °C

FEATURES

APPLICATIONS

• Halogen-free According to IEC 61249-2-21

•

• New Low Thermal Resistance PowerPAK

• Portable

Symbol

Available

TrenchFET

Package

- PA Switch

- Battery Switch

- Load Switch

, T

thJA

thJC

stg

P-Channel MOSFET

Power MOSFET

Typical

- 7.4

- 5.3

- 2.3

10 s

2.8

1.5

- 55 to 150

- 20

260

± 8

Steady State

Maximum

- 5.0

- 3.6

- 1.1

0.85

1.3

Vishay Siliconix

P-Channel MOSFET

Si7913DN

www.vishay.com

°C/W

Unit

°C

Related parts for SI7913DN-T1-E3

SI7913DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7913DN-T1-E3 (Lead (Pb)-free) Si7913DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7913DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 72615 S-83050-Rev. C, 29-Dec-08 2100 1800 1500 1200 0.10 0.08 0.06 0. °C J 0.02 0.00 0.8 1.0 1.2 Si7913DN Vishay Siliconix C iss 900 600 C oss 300 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 ...

Page 4

... Si7913DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited by R DS(on Limited ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72615. Document Number: 72615 S-83050-Rev. C, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7913DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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