MT9VDDF3272Y-40BK1 Micron Technology Inc, MT9VDDF3272Y-40BK1 Datasheet
MT9VDDF3272Y-40BK1
Specifications of MT9VDDF3272Y-40BK1
Related parts for MT9VDDF3272Y-40BK1
MT9VDDF3272Y-40BK1 Summary of contents
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... MT9VDDF3272 – 256MB MT9VDDF6472 – 512MB For component data sheets, refer to Micron’s Web site: Features • 184-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 256MB (32 Meg x 72) and 512MB (64 Meg x 72) • Supports ECC error detection and correction • ...
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... Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT9VDDF3272Y-335G3. PDF: 09005aef8082c948/Source: 09005aef807d56a1 ddf9c32_64x72.fm - Rev. C 10/08 EN ...
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... Table 4: Part Numbers and Timing Parameters – 512MB Modules Base device: MT46V64M8, Module 2 Part Number Density 512MB MT9VDDF6472G-40B__ 512MB MT9VDDF6472Y-40B__ MT9VDDF6472G-335__ 512MB MT9VDDF6472Y-335__ 512MB MT9VDDF6472G-265__ 512MB 512MB MT9VDDF6472Y-265__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. ...
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... Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V). Supply SPD EEPROM power supply: +2.3V to +3.6V. Supply SSTL_2 reference voltage (V Supply Ground. – No connect: These pins are not connected on the module. 4 Pin Assignments and Descriptions 2 C bus. /2). DD Micron Technology, Inc., reserves the right to change products or specifications without notice. ...
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Functional Block Diagrams Figure 3: Functional Block Diagram R/C G (-40B, -335, -265) RS0# DQS0 DM0 DQS1 DM1 DQS2 DM2 DQS3 DM3 DQS8 DM8 U6 S0# e BA0, BA1 g A0–A12 i RAS CAS# e CKE0 ...
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Figure 4: Functional Block Diagram R/C A (-335, -262, -26A, -265) RS0# DQS0 DM0 DQS1 DM1 DQS2 DM2 DQS3 DM3 DQS8 DM8 U11, U13 R e S0# g BA0, BA1 i A0–A12 s RAS# t CAS# e CKE0 r WE# ...
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... The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for DDR SDRAM modules effectively consists of a single 2n-bit-wide, one- clock-cycle data transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins ...
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... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli- ability ...
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... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...
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I Specifications DD Table 9: I Specifications and Conditions – 256MB (Die Revision K) DD Values are for MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating ...
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Table 10: I Specifications and Conditions – 256MB (All Other Die Revisions) DD Values are for MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one device ...
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Table 11: I Specifications and Conditions – 512MB DD Values are for MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one device bank active-precharge current: t ...
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... Timing and switching specifications for the register listed above are critical for proper oper- ation of the DDR SDRAM RDIMM devices. These are meant subset of the parameters for the specific device used on the module. Detailed information for this register is available in JEDEC Standard JESD82. ...
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Table 13: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter DC high-level input voltage DC low-level input voltage Input voltage (limits) Input differential-pair cross voltage Input differential voltage Input differential voltage Input current Dynamic supply current Dynamic supply current Dynamic ...
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Serial Presence-Detect Table 15: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...
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... U9 U8 0.9 (0.035) R 1.02 (0.04) 6.35 (0.25) TYP TYP TYP 120.65 (4.75) TYP Back view No components this side of module 73.28 (2.88) Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 Module Dimensions U12 U10 U11 17.78 (0.70) TYP U13 10 ...
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... TYP TYP 1.0 (0.039) 64.77 (2.55) TYP No components this side of module Pin 184 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for com- plete design dimensions. ...