MT16HTF25664AY-800G1 Micron Technology Inc, MT16HTF25664AY-800G1 Datasheet - Page 17

• Manufacturer Part Number: MT16HTF25664AY-800G1
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF25664AY-800G1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 256Mx64
• Total Density: 2GByte
• Chip Density: 1Gb
• Access Time (max): 40ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Table 13: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef80f09084
htf16c64_128_256x64ay.pdf - Rev. G 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
(I
HIGH between valid commands; Address bus inputs are stable during deselects;
Data bus inputs are switching
DD
),
t
RC =
OUT
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
),
DD
t
RRD =
Notes:
Specifications and Conditions (Die Revision A) – 2GB (Continued)
t
RRD (I
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
in I
DD
DD
DD2P
),
), AL =
t
RCD =
(CKE LOW) mode.
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM
t
RCD (I
t
RCD (I
DD
DD
) - 1 ×
); CKE is HIGH, S# is
17
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CK
Symbol
I
DD7
1
-667
2456
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
-53E
2376
Specifications
2136
-40E
Units
mA