MT48H16M32LFCM-6 AT:B Micron Technology Inc, MT48H16M32LFCM-6 AT:B Datasheet - Page 66

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MT48H16M32LFCM-6 AT:B

Manufacturer Part Number
MT48H16M32LFCM-6 AT:B
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H16M32LFCM-6 AT:B

Lead Free Status / Rohs Status
Compliant
Figure 36: READ With Auto Precharge Interrupted by a WRITE
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf - Rev. G 08/09 EN
Internal
States
Command
Note:
Address
Bank m
Bank n
DQM
CLK
DQ
1
1. DQM is HIGH at T2 to prevent D
active
Page
READ - AP
Bank n,
Bank n
T0
Col a
READ with burst of 4
Page active
NOP
CL = 3 (bank n)
T1
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T2
NOP
66
T3
D
NOP
OUT
OUT
a + 1 from contending with D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
D
Interrupt burst, precharge
IN
WRITE with burst of 4
T5
NOP
D
t
RP - bank n
IN
PRECHARGE Operation
T6
NOP
D
IN
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IN
d at T4.
T7
NOP
D
t WR - bank m
Don’t Care
IN
Write-back
Idle

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