MT48H16M32LFCM-6 AT:B Micron Technology Inc, MT48H16M32LFCM-6 AT:B Datasheet - Page 48

• Manufacturer Part Number: MT48H16M32LFCM-6 AT:B
• Manufacturer: Micron Technology Inc

Specifications of MT48H16M32LFCM-6 AT:B

• Lead Free Status / Rohs Status: Compliant

Figure 17: Consecutive READ Bursts
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf - Rev. G 08/09 EN
Note:
Command
Command
Address
Address
1. Each READ command can be issued to any bank. DQM is LOW.
CLK
CLK
DQ
DQ
T0
T0
Bank,
READ
READ
Col n
Bank,
Col n
CL = 2
CL = 3
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T1
T1
NOP
NOP
48
T2
T2
NOP
NOP
D
OUT
n
T3
T3
NOP
NOP
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D
D
n + 1
OUT
OUT
READ
T4
READ
T4
Bank,
Bank,
Col b
Col b
X = 1 cycle
D
n + 2
D
Transitioning data
OUT
OUT
X = 2 cycles
T5
T5
NOP
NOP
D
D
n + 3
OUT
OUT
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T6
T6
NOP
NOP
READ Operation
D
D
OUT
OUT
b
Don’t Care
T7
NOP
D
OUT