PNX1311EH/G NXP Semiconductors, PNX1311EH/G Datasheet - Page 193
PNX1311EH/G
Manufacturer Part Number
PNX1311EH/G
Description
Manufacturer
NXP Semiconductors
Datasheet
1.PNX1311EHG.pdf
(548 pages)
Specifications of PNX1311EH/G
Lead Free Status / RoHS Status
Compliant
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Philips Semiconductors
64-Mbit SDRAMs organized in x16 can be used to build
a 16-, 32-, 48- or 64-MB memory systems.
Figure 12-7. Schematic of a 32-MB memory system consisting of four 4×1M×16 SDRAM chips (two ranks)
MM_CLK[1]
MM_CS#[1]
MM_CLK[0]
MM_CS#[1]
MM_CLK[1]
MM_CS#[0]
MM_CLK[0]
MM_CS#[0]
Figure 12-7
CLK
Control
CS#
CLK
Control
CS#
CLK
Control
CS#
CLK
Control
CS#
Address[11:0]
Address[11:0]
Address[11:0]
Address[11:0]
BA[1:0]
BA[1:0]
BA[1:0]
BA[1:0]
PNX1300
4×1M×16
4×1M×16
4×1M×16
4×1M×16
SDRAM
SDRAM
SDRAM
SDRAM
details a 32-MB memory system. Removing the device
controlled by MM_CS#[1] makes a 16-MB system.
PRELIMINARY SPECIFICATION
DQM[1:0]
DQM[1:0]
DQM[1:0]
DQM[1:0]
DQ[15:0]
DQ[15:0]
DQ[15:0]
DQ[15:0]
MM_DQ[31:16]
MM_DQ[31:16]
MM_DQM[3:2]
MM_DQ[15:0]
MM_DQM[1:0]
MM_DQM[3:2]
MM_DQM[1:0]
MM_DQ[15:0]
SDRAM Memory System
12-11
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