MT47H128M16HG-3:A Micron Technology Inc, MT47H128M16HG-3:A Datasheet - Page 108

• Manufacturer Part Number: MT47H128M16HG-3:A
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H128M16HG-3:A

• Organization: 128Mx16
• Address Bus: 17b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 275mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 61: WRITE Interrupted by WRITE
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. F 12/10 EN
DQS, DQS#
Command
Address
CK#
A10
DQ
CK
WRITE 1 a
Valid 5
T0
2-clock requirement
Notes:
NOP 2
T1
WL = 3
1. BL = 8 required and auto precharge must be disabled (A10 = LOW).
2. The NOP or COMMAND INHIBIT commands are valid. The PRECHARGE command cannot
3. The interrupting WRITE command must be issued exactly 2 ×
4. The earliest WRITE-to-PRECHARGE timing for WRITE at T0 is WL + BL/2 +
5. The WRITE command can be issued to any valid bank and row address (WRITE command
6. Auto precharge can be either enabled (A10 = HIGH) or disabled (A10 = LOW) by the in-
7. Subsequent rising DQS signals must align to the clock within
8. Example shown uses AL = 0; CL = 4, BL = 8.
be issued to banks used for WRITEs at T0 and T2.
starts with T7 and not T5 (because BL = 8 from MR and not the truncated length).
at T0 and T2 can be either same bank or different bank).
terrupting WRITE command.
WRITE 3 b
Valid 6
Valid 5
T2
NOP 2
T3
DI
a
WL = 3
a + 1
DI
NOP 2
a + 2
T4
7
DI
108
a + 3
DI
NOP 2
T5
DI
b
7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
b + 1
DI
2Gb: x4, x8, x16 DDR2 SDRAM
NOP 2
b + 2
T6
DI
7
b + 3
DI
Valid 4
b + 4
T7
DI
7
Transitioning Data
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t
t
b + 5
DQSS.
CK from previous WRITE.
DI
Valid 4
b + 6
T8
DI
7
b + 7
t
DI
WR where
Valid 4
Don’t Care
T9
WRITE
t
WR