MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 74

• Manufacturer Part Number: MT29F2G16ABBEAH4-IT:E
• Description: 128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
• Manufacturer: Micron Technology Inc

Figure 50: INTERNAL DATA MOVE (85h-10h) with Internal ECC Enabled
Figure 51: INTERNAL DATA MOVE (85h-10h) with RANDOM DATA INPUT with Internal ECC Enabled
PROGRAM FOR INTERNAL DATA MOVE (85h–10h)
Figure 52: PROGRAM FOR INTERNAL DATA MOVE (85h–10h) Operation
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
I/O[7:0]
I/O[7:0]
R/B#
R/B#
Cycle type
00h
00h
I/O[7:0]
Source address
Source address
RDY
(5 cycles)
Address
(5 cycles)
Address
Command
35h
35h
The PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command is functionally iden-
tical to the PROGRAM PAGE (80h-10h) command, except that when 85h is written to
the command register, cache register contents are not cleared.
85h
t
R_ECC
t
R_ECC
Address
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
70h
C1
70h
Status
Address
Status
C2
00h
00h
Address
R1
D
D
OUT
OUT
Address
74
D
is optional
R2
D
OUT
OUT
is optional
85h
Address
Destination address
R3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(5 cycles)
85h
Address
2Gb: x8, x16 NAND Flash Memory
Destination address
Command
(5 cycles)
Address
Internal Data Move Operations
10h
Data
(Unlimitted repetitions are possible)
t WB
85h
Column address 1, 2
10h
(2 cycles)
Address
t
PROG_ECC
t PROG
Data
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SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
70h
10h
t
PROG_ECC
Status
00h
70h