MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 25

• Manufacturer Part Number: MT29F2G16ABBEAH4-IT:E
• Description: 128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
• Manufacturer: Micron Technology Inc

Figure 17:
Figure 18:
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
t
t
Fall and
Fall and
Notes:
Notes:
t
t
Rise (3.3V V
Rise (1.8V V
V
V
1.
2.
3.
4.
5. See TC values in Figure 21 (page 27) for approximate Rp value and TC.
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
1.
2.
3.
4. See TC values in Figure 21 (page 27) for TC and approximate Rp value.
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
t
t
pedance.
t
t
t
t
t
Fall and
Rise dependent on external capacitance and resistive loading and output transistor im-
Rise primarily dependent on external pull-up resistor and external capacitive loading.
Fall = 10ns at 3.3V.
Fall and
Rise is primarily dependent on external pull-up resistor and external capacitive loading.
Fall ≈ 7ns at 1.8V.
–1
-1
CC
CC
)
)
t
t
Rise calculated at 10% and 90% points.
Rise are calculated at 10% and 90% points.
0
0
t Fall
2
2
25
t Fall t Rise
4
4
Asynchronous Interface Bus Operation
Micron Technology, Inc. reserves the right to change products or specifications without notice.
TC
TC
0
2Gb: x8, x16 NAND Flash Memory
0
t Rise
2
2
4
4
© 2009 Micron Technology, Inc. All rights reserved.
V
V
CC
6
CC
1.8V
6
3.3V