BFT92W,115 NXP Semiconductors, BFT92W,115 Datasheet - Page 9

• Manufacturer Part Number: BFT92W,115
• Description: TRANS PNP 35MA 15V 4GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFT92W,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 4GHz
• Noise Figure (db Typ @ F): 2.5dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 20 @ 15mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1656-2; 934022960115; BFT92W T/R

NXP Semiconductors
May 1994
PNP 4 GHz wideband transistor
f = 500 MHz; V
f = 1 GHz; V
CE
CE
= 10 V; I
= 10 V; I
C
= 5 mA; Z
C
= 5 mA; Z
180
180
Fig.16 Common emitter noise figure circles, typical values.
Fig.17 Common emitter noise figure circles, typical values.
o
o
o
= 50 .
o
= 50 .
0
0
135
135
135
135
0.2
0.2
0.2
0.2
o
o
o
o
0.2
0.2
0.5
0.5
0.5
0.5
0.5
0.5
9
F
90
90
90
90
1
1
min
1
F
1
1
1
F = 5 dB
F = 4 dB
o
o
o
F = 3.5 dB
o
min
F = 5 dB
F = 4 dB
Γ
= 3 dB
F = 3 dB
Γ
opt
= 2.5 dB
opt
2
2
2
2
2
2
5
5
45
45
45
45
o
o
o
o
5
5
5
5
MLB554
MLB555
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFT92W